Nichia Chemical Company “EverResearchingforaBrighterWorld” for the purpose, so far committed to the manufacture and sale of the fluorescent powder (inorganic fluorescent powder) as the center of the precise chemicals. Light-emitting material in the development process, published in 1993, the blue LED has shocked the world, have achieved ~ yellow nitride UV LED and white LED commercialization and significant increases in LED applications. In addition, Nichia Chemical Company is vigorously developing essential for the development of an information medium violet blue laser diode, hope that the nitride semiconductor to be important areas of the semiconductor industry part. Therefore, the Company will own the technology in product manufacturing, want to be able to contribute to the enterprise world.

Nichia Blu-ray lasers used for the manufacture of GaN substrates, with the process and structure modifications, to produce a continuous wave 515nm wavelength green laser diodes, breaking the previous indium gallium nitride electroluminescent (InGaN) maintained by the 500nm laser the longest wavelength of records and moving up to hundreds of hours of the life cycle of the target.

Nichia 515nm laser did not provide the reliability of the data, but they made another section for the 510-513nm wavelength laser diode can operate under the same electrical 500 hours; more than 500 hours, the laser performance will be gradually reduced . Nichia researchers operating current according to a 30% increase compared to the initial value of the defined life of the laser can be estimated that the use of lasers can take up to 5,000 hours.

Nichia team-type heterostructures using separation constraints (separateconfinementheterostructure, SCH) laser diode to produce, and their design published in 2001 are almost identical. Through optimized MOCVD process, the thin film deposited on AlInGaN independent (free-standing) c-plane (c-plane) GaN substrate, is to produce materials with high indium content in the green key.

Nichia team said that they improve the epitaxial layer, in particular multi-layer quantum well (MQW) and the crystal growth conditions, but also improve the high indium content in InGaN active layer of the crystalline quality, but released no further details on the most optimal conditions. Nichia has previously been published in the InGaN laser diode wavelength 488nm, but because of poor crystal quality led to the emergence of non-radiation region in the PL (photoluminescence, PL) analysis of the dark areas under the present. Nichia’s TakashiMukai, who pointed out that the design of new devices, these areas have been eliminated.

Room temperature, the wavelength of 515nm laser diode threshold current and current density were 53mA and 4.4kA/cm2. In the operating current of 88mA, 5.5V voltage conditions, the output power of 5mW. The operating wavelength of 510-513nm laser diode, temperature changes at room temperature caused by the wavelength of maximum offset of 0.022nm / K, much smaller than the Osram and Rohm recently launched green laser diodes.

The rapid development of science and technology continue living also get a lot of convenience, there are many of these inventions is not behind the bitterness of the hostages, but the joy of success again and again dilute the difficulties of these difficult words, an invention of the human and material resources required, need teamwork need without paying the price.

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