Today we will know about FZ1200R12KL4C, a 1200A/1200V IHM 130mm single switch IGBT power transistor module with IGBT2 low loss and Emitter Controlled Diode. The weight of this device is 8.82 lbs. It is the perfect choice for your industry applications such as Motor Control and Drives, Solar Energy Systems, Wind Energy Systems, Uninterruptable Power Supplies, and etc. It is manufactured by famous German manufacturer Infineon Technologies who are specialist in making semiconductors and system solutions by targeting the primary needs of our modern society. Infineon was known as Eupec previously in the world of technology.

High reliableness and solid module construction are the features for which FZ1200R12KL4C is exceptional. This module is recognized by UL too. We will be eligible to get some extra advantages if we use this transistor in our industry applications. High power density can be achieved for compact inverter designs by using this. Standardized housing is another attribute which makes FZ1200R12KL4C unique.

We are going to have a discussion about the implementation of FZ1200R12KL4C in solar inverters.

Solar power has a large potential to provide the electricity needs of the world’s burgeoning population. However, in 2008 solar-power supplied less than 0.02% of the world\’s total energy supply.

A solar inverter converts variable direct current (DC) output of a photovoltaic (PV) solar array panel to AC voltage. The energy produced from solar panels is used to power household appliances directly, charge batteries or feed electricity directly back to the grid in return for credit against future power bills. All of these applications need AC voltage. The DC voltage produced by the solar array must be converted into a desired well regulated AC power by using an IGBT based inverter. FZ1200R12KL4C provides advantages in solar inverter applications compared to other types of power devices. It delivers low conduction and switching losses resulting in high inverter efficiency. Benefits like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode are found when FZ1200R12KL4C is used as the power device in solar inverters.

FZ1200R12KL4C has some major advantages over MOSFETs and bipolar transistors. First, it has very low on-state voltage drops because of the conductivity modulation, in addition to superior on-state current density. These factors allow manufacturers to fabricate devices with smaller chip size and at lower cost. Second, these boast low driving power and simple driving circuits due to the input MOS gate structure. It is simpler to control compared to current controlled devices such as bipolar transistors. Third, FZ1200R12KL4C has fantastic forward and reverse blocking capabilities. These characteristics encourage designers to select this IGBT module for solar inverter applications.

Young & New Century LLC is located at Houston in Texas, United States. Our official website is Uscomponent.com. We have been selling IGBT power transistor modules like FZ1200R12KL4C for the last fourteen years. We sell original & new parts only. You can trust us in terms of quality because we always try to supply the authentic parts. All of our parts are backed up with 30 days warranty. Please take a look at our website for stock check or technical support.

See more at: http://www.uscomponent.com/product/FZ1200R12KL4C

David Smith, Senior Vice President of USComponent.com , an IGBT power transistor module distributor since 2001.

David Smith, Senior Vice President of http://USComponent.com , an IGBT power transistor module distributor since 2001.

Author Bio: David Smith, Senior Vice President of USComponent.com , an IGBT power transistor module distributor since 2001.

Category: Computers and Technology
Keywords: IGBT, distributor