Fairchild Semiconductor is extending its rising product line of automotive-category semiconductor solutions for hybrid electric vehicles (HEV), plug-in hybrid electric vehicles (PHEV) and electric vehicles (EV) with its new detached and bare die IGBTs and diodes. These IGBTs and diodes are perfect for traction inverters, nucleus of all HEVs, PHEVs and EVs that alter the batteries\’ electricity from direct current into the three-phase alternating current needed by the vehicle’s drive motors.

These new discrete and bare die IGBTs and diodes utilize state-of-the-art third generation Field Stop Trench IGBT technology and a soft fast recovery diode is eligible for automotive-grade standards and has extra features and options. The mix of these innovations, characteristics and options enables Fairchild to supply products with a tight parametric ordination for both discrete and bare die solutions.

Fairchild\’s latest FGY160T65SPD_F085 and FGY120T65SPD_F085 discrete IGBTs are appropriate to traction inverters and other HEV/PHEV/EV powertrain stuffs that need high power density and high reliableness.

Supplementing their performance and reliableness is the adaptability these discrete IGBTs offer designers to modify their products. Designers can just add IGBTs in parallel to accomplish the needed system power rating, while also enhancing the total efficiency of their traction inverter or other powertrain component designs.

Fairchild is also making declaration about the availableness of its PCGA200T65NF8 rectifiers and PCRKA30065F8 bare die IGBTs and diodes for automakers and automotive parts suppliers making their own power modules for high performance traction inverters and other motor-driving components.

Fuji Electric is famous for their transistor modules for high speed switching applications. They have comprised another lineup of power semiconductors to its product portfolio with the “High-Speed W” Series of high-speed discrete IGBTs. The latest product series utilizes a slender IGBT chip to miniaturize, as a result of this, lessening power loss (turnoff loss) in switching operation by nearly 40% in comparison to standard products (High-Speed V Series). This plays a part in energy saving and power cost decrease of the devices on which the products are mounted. Loss in switching operation has also been minimized (subdued heat propagation) for compatibility with higher switching frequencies (20 to 100 kHz) in comparison to standard products (around 20 kHz).

“The introduction of the High-Speed W Series is a valuable addition to our product portfolio as it offers our customers advanced features that they need to compete in today’s market,” said Jeff Knapp, General Manager of Fuji Electric’s Semiconductor Dept. “The new IGBT allows the ability to downsize the peripheral parts such as coils and transformers within the system and therefore contributes to the overall downsizing of the equipment itself, leading to a reduction in the total cost of ownership.”

The company refers the expanding worldwide need for energy in the current years as the main impetus behind the development of the High-Speed W Series. The ever-increasing demand for the energy-efficient performance of industrial and communications equipments along with the need for downsizing and space-saving of the equipment itself imbued them to bring in a high-speed discrete IGBT that fulfilled these needs.

David Smith, Senior Vice President of USComponent.com , an IGBT power transistor module distributor since 2001.

David Smith, Senior Vice President of http://USComponent.com , an IGBT power transistor module distributor since 2001.

Author Bio: David Smith, Senior Vice President of USComponent.com , an IGBT power transistor module distributor since 2001.

Category: Computers and Technology
Keywords: IGBT, distributor